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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU921T DESCRIPTION *High Voltage *DARLINGTON APPLICATIONS *Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VALUE 450 UNIT V Collector Current-peak Base Current w w scs .i w 400 5 10 15 5 105 150 -65~150 .cn mi e V V A A A W PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.2 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU921T MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA B 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA B 2.5 0.25 0.5 0.25 V ICES Collector Cutoff Current VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VECF C-E Diode Forward Voltage w w scs .i w IF= 7A VCE= 400V; IB= 0 VEB= 5V; IC= 0 .cn mi e mA mA 50 mA 2.5 V isc Websitewww.iscsemi.cn |
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